Process Defect Monitor Reticleiiiiiiiiiiiiiiiiiii

The Process Defect Monitor Reticle is uniquely designed to identify critical process defects associated with today's sub-0.25 um design rules.

The Process Defect Monitor Reticle rapidly and accurately detects yield-relevant defects introduced during the resist, expose and develop process. These include particulate contamination, resist microbubbling, and develop residue.

Designed for use with automated metrology inspection tools, the Process Defect Monitor Reticle dramatically decreases characterization time and improves yields in critical semiconductor processes.

Features

• Designed for use with automated wafer defect inspection tools
• Designed for rapid defect detection
• Reticle is defect-free to within 0.5 um
• Pelliclized reticle
• Lines at minimum pitch

Applications

• Inspect defects introduced during coat/expose/developprocesses
• Monitor particle contamination
• Detect coat microbubbling or develop residue
• Monitor process variations

For more information on the Process Defect Monitor Reticle, contact us.